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Direct Bonding SOI Wafer Based Cantilever Resonator for ...

The fabrication process is based on direct bonding silicononinsulator (SOI) wafer and inductive coupled plasma (ICP) etching technology, which conciliate the semiconductor processes and the micromaching processes, and provide precise control of the resonator parameters. The experimental test results of the fabricated resonator agreed well with the calculation and …


SOI and Direct Wafer Bonding System in Killinick, Ireland

EVG850LT Automated Production Bonding System for SOI and Direct Wafer Bonding with LowTemp® Plasma Activation (up to 200mm, up to 5 process modules, automated handling) For substrate sizes up to 200mm. Tooled for 150mm wafers SECS II / GEM – Hardware / Software Interface Hardware: SEMI E4 – SEMI EQUIPMENT COMMUNICATIONS STANDARD 1 …


Wafer Bonding Enables New Technologies and Applications

waferlevel packaging, 3 D chip stacking and silicononinsulator (SOI) wafers. The myriad of applications has led to several bonding methods. Also, a new type of wafer bonding application is emerging that combines various materials as a means of designing novel devices. These customengineered substrates allow for combinations of materials that have been imagined for …


‪Wei Gao‬ ‪Google Scholar‬

‪California Institute of Technology‬ ‪‪Cited by 16,495‬‬ ‪Wearable Sensors‬ ‪Digital Medicine‬ ‪Microrobotics‬ ‪Bioelectronics‬


Direct wafer bonding for MEMS and microelectronics ...

Direct wafer bonding is a method for fabricating advanced substrates for microelectromechanical systems (MEMS) and integrated circuits (IC). The most typical example of such an advanced substrate is the silicononinsulator (SOI) wafer. SOI wafers offer many advantages over conventional silicon wafers. In IC technology, the switching speed of circuits …


Trace Gas Sensor Based on MEMS Cantilever Resonator ...

A chemical gas sensor for volatile organic compounds (VOCs) detection at trace level is proposed. In this paper, the development and demonstration of the sensor prototype are presented. The prototype is based on a microcantilever resonator that is fabricated from direct bonding silicononinsulator (SOI) wafer. The resonant cantilever employs integrated …


Method for Direct Bonding Two Silicon Wafers for ...

Method for Direct Bonding Two Silicon Wafers for Minimising Interfacial Oxide and Stresses at the Bond Interface, and an Soi Structure . 7153757 10651180 USPTO Application Aug 29, 2003 Publication Dec 26, 2006 Paul Damien McCann William Andrew Nevin. Abstract. A semiconductor substrate (1) comprises first and second silicon wafers (2,3) directly bonded …


Scientific Publications | Technische Universität Ilmenau

Das BlendenArray wird aus 200 [my]m dünnem Glas hergestellt, hat eine Größe von 5,5×7 mm^2 und eine Masse von 1720 mg. Das reaktive Ionentiefenätzen von Silicium (DRIE) spielt eine zentrale Rolle bei der Fertigung der Aktorchips auf einem SilicononInsulator (SOI) Wafer und wird für eine bessere Strukturtreue optimiert. Es werden zwei Aktorsysteme entworfen und …


Publikationsliste TU Wien

"Direct Frequency Reading Laser Spectroscopy: ... "Modulares Regelungssystem für den einphasig gespeisten Netzstromrichter eines Traktionsantriebes"; EI Elektrotechnik und Informationstechnik, 114 (1997), 7/8; S. 391 397. K. Göschka: "Generation of firmwarecompilers"; Journal of Systems Architecture, 43 (1997), S. 99 109. A. Goiser: …


Direct bonding of oxidized cavity wafers — VTT''s Research ...

SOI wafers with buried cavities can be used in MEMS fabrication to give more freedom in design and to simplify the process. Sometimes an etch stop layer is needed when DRIE is used to release the MEMS structures in order to prevent etching from continuing at the bottom of the cavity. Thermal oxidation of the cavity wafer as a method for forming an etch stop layer was …


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PixelParallel 3D Integrated CMOS Image Sensors Developed ...

PixelParallel 3D Integrated CMOS Image Sensors Developed by Direct Bonding of SOI Layers for NextGeneration Video Systems


VTT€PUBLICATIONS€609 …

Direct wafer bonding is a method for fabricating advanced substrates for microelectromechanical systems (MEMS) and integrated circuits (IC). The most typical example of such an advanced substrate is the silicononinsulator (SOI) wafer. SOI wafers offer many advantages over conventional silicon wafers. In IC technology, the switching speed of circuits …


مرکز منطقه ای اطلاع رساني علوم و فناوري Heat Transfer in ...

A novel silicononinsulator (SOI) manufacturing method, the fast linear annealing (FLA) method, is proposed. In the fast linear annealing method, a halogen lamp moves with a constant speed above a silicon wafer pair prebonded by the hydrogen iInteraction. In order to optimize the processing parameters such as the initial heat treatment time and the moving speed of the …


Direct bonding SOI Wafer based MEMS cantilever resonator ...

Home Browse by Title Proceedings NEMS ''09 Direct bonding SOI Wafer based MEMS cantilever resonator for trace gas sensor applicaiton. Article . Free Access. Direct bonding SOI Wafer based MEMS cantilever resonator for trace gas sensor applicaiton. Share on. Authors: Dong Ying. Department of Precision Instruments and Mechanology, Tsinghua University, …


Silicon Direct Bonding ScienceDirect

20150101· Direct wafer bonding of silicon wafers is a robust and simple method to fuse two wafers together, but it is not suitable for every application. A lowtemperature bonding process may be needed if the wafers are preprocessed, contain temperaturesensitive materials or components, or have different thermal expansion coefficients. The most common methods …


Direct Wafer Bonding of GaInAsP/InP Membrane Structure on ...

20200408· Direct Wafer Bonding of GaInAsP/InP Membrane Structure on SilicononInsulator Substrate Takeo MARUYAMA 1;2, Tadashi OKUMURA and Shigehisa ARAI1;2 1Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2121S95 Ookayama, Meguroku, Tokyo 1528552, Japan 2Core Research for Evolutional Science and …


Garnet/SOI MagnetoOptical Devices Fabricated by Direct ...

Garnet/SOI MagnetoOptical Devices Fabricated by Direct Wafer Bonding Silicononinsulator (SOI) is an attractive substrate for dense integrated optical circuits because of its high index contrast, which allows small, highperformance components such as waveguides, bends, splitters, and modulators. In addition, SOI substrates allow seamless integration with electronics for on …


US20060099773A1 Fabrication of a low defect germanium ...

A method of fabricating a low defect germanium thin film includes preparing a silicon wafer for germanium deposition; forming a germanium film using a twostep CVD process, annealing the germanium thin film using a multiple cycle process; implanting hydrogen ions; depositing and smoothing a layer of tetraethylorthosilicate oxide (TEOS); preparing a counter wafer; bonding …


Wafer Bonding an overview | ScienceDirect Topics

Waferbonded CMUTs can be fabricated by fusion bonding a silicon and a silicononinsulator (SOI) wafers (Fig. ). The cavity is formed by wet etching the thermally grown SiO 2 layer on top of the silicon substrate. Precise and uniform cavity depth and highsurface quality can easily be achieved by the welldefined thermal oxidation process. After patterning the cavity, the …


Proceedings of the 2009 4th IEEE International Conference ...

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Direct bonding SOI Wafer based MEMS cantilever resonator ...

A thermal driving and piezoresistive sensing MEMS cantilever resonator has been proposed and developed to construct trace gas detection sensors. The problem of integrating vibration structure, transducers and electric elements is the main concern in the design and fabrication of the resonator. In this paper, the parameters and the configuration of the resonator are …


SEMICONDUCTOR WAFER BONDING

The most prominent applications of wafer bonding are silicononinsulator (SOI) devices, siliconbased sensors and actuators, as well as optical devices. The basics of waferbonding technology are described, including microcleanroom approaches, prevention of interface bubbles, bonding of IIIV compounds, lowtemperature bonding, ultrahigh vacuum bonding, thinning …


2009 4th IEEE International Conference on Nano/Micro ...

Direct bonding SOI Wafer based MEMS cantilever resonator for trace gas sensor applicaiton 2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems /


Monolithic integration of Si‑CMOS and III‑V‑on‑Si through ...

IIIVonSi Through Direct Wafer Bonding Process KWANG HONG LEE 1,YUEWANG1,BINGWANG1, LI ZHANG1, WARDHANA AJI SASANGKA1, SHUH CHIN GOH1, SHUYU BAO2, KENNETH E. LEE1, EUGENE A. FITZGERALD3, AND CHUAN SENG TAN2 (Member, IEEE) 1 Low Energy Electronics Systems, Singapore—MIT Alliance for Research …


Effect of NH4OH Treatment on Plasma‐Assisted InP/Al2O3/SOI ...

20180301· In our study on plasma‐assisted InP/Al2O3/SOI wafer bonding, it is found that the success of bonding relies critically on NH4OH treatment of InP wafer. NH4OH dipping has been adopted in previous study on InP/SOI wafer bonding and is known to remove native oxides from the wafers. However, NH4OH is found to be inefficient for oxide removal on ...


Publications Gao Research Group Caltech

2021 (*Corresponding author) 104. J. Tu, W. Gao* , Ethical Considerations of Wearable Technologies in Human Research , Advanced Healthcare Materials , 2021, 2100127 ...